Issue 27, 2017

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

Abstract

Solid-state single photon sources with polarisation control operating beyond the Peltier cooling barrier of 200 K are desirable for a variety of applications in quantum technology. Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g(2)(0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems.

Graphical abstract: Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

Supplementary files

Article information

Article type
Paper
Submitted
12 May 2017
Accepted
14 Jun 2017
First published
29 Jun 2017
This article is Open Access
Creative Commons BY license

Nanoscale, 2017,9, 9421-9427

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

T. Wang, T. J. Puchtler, T. Zhu, J. C. Jarman, L. P. Nuttall, R. A. Oliver and R. A. Taylor, Nanoscale, 2017, 9, 9421 DOI: 10.1039/C7NR03391E

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements